Operation and modeling of the MOS transistor
| Κύριος συγγραφέας: | |
|---|---|
| Μορφή: | Βιβλίο |
| Γλώσσα: | English |
| Έκδοση: |
McGraw-Hill
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| Σειρά: | VLSI, Electronics and Electronic Circuits |
MARC
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| 010 | |a 0-07-065381-X | ||
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| 100 | |a 19981005d1987 0grey0105 ba | ||
| 101 | 0 | |a eng | |
| 200 | 1 | |a Operation and modeling of the MOS transistor |f Yannis P. Tsividis | |
| 210 | |a New York |c McGraw-Hill |d c1987 | ||
| 215 | |a xx, 505 p. |c diagr. |d 24 cm. | ||
| 225 | 2 | |a McGraw-Hill Series in Electrical Engineering |e VLSI, Electronics and Electronic Circuits | |
| 320 | |a Includes bibliographical references and index | ||
| 410 | 1 | |t McGraw-Hill Series in Electrical Engineering |i VLSI, Electronics and Electronic Circuits | |
| 606 | 0 | |a Ημιαγωγοί μεταλλικού οξειδίου | |
| 676 | |a 621.381 528 4 | ||
| 700 | 1 | |a Τσιβίδης |b Γιάννης Π. | |
| 709 | |a McGraw-Hill | ||
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| 852 | |a INST |b LIBRARY |e 19981009 |h 621.381 528 4 ΤΣΙ |p 000007678 |q 000007678 |t BK |y 23 |z 1 | ||
| 901 | |a 000552 | ||
| 909 | |b 011927 | ||
| 970 | |a ΜΠΑΜΠΑΗ |b ΛΙΤΣΑ |z 1998-10 | ||
Εγγραφή στο Ευρετήριο Αναζήτησης
| _version_ | 1780545235262111744 |
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| author | Τσιβίδης Γιάννης Π. |
| author_facet | Τσιβίδης Γιάννης Π. |
| author_role | |
| author_sort | Τσιβίδης Γιάννης Π. |
| author_variant | τ γ π τγπ |
| building | Campus Library II |
| collection | LIB2 Catalog |
| dewey-full | 621.3815284 |
| dewey-hundreds | 600 |
| dewey-ones | 621 |
| dewey-raw | 621.381 528 4 |
| dewey-search | 621.381 528 4 |
| dewey-sort | 3621.381 3528 14 |
| dewey-tens | 620 |
| format | Book |
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|
| id | lib2_1/12551 |
| illustrated | Not Illustrated |
| institution | University of West Attica |
| isbn | 0-07-065381-X |
| language | English |
| physical | xx, 505 p. diagr. 24 cm. |
| publishDate | 1987 |
| publisher | McGraw-Hill |
| record_format | marc |
| series | VLSI, Electronics and Electronic Circuits |
| series2 | McGraw-Hill Series in Electrical Engineering VLSI, Electronics and Electronic Circuits |
| spelling | 19981005d1987 0grey0105 ba eng Operation and modeling of the MOS transistor Yannis P. Tsividis New York McGraw-Hill c1987 xx, 505 p. diagr. 24 cm. McGraw-Hill Series in Electrical Engineering VLSI, Electronics and Electronic Circuits Includes bibliographical references and index Ημιαγωγοί μεταλλικού οξειδίου 621.381 528 4 Τσιβίδης Γιάννης Π. McGraw-Hill GR ΠΑ.Δ.Α. Βιβλιοθήκη Πανεπιστημιούπολης 2 AACR2 INST LIBRARY 19981009 621.381 528 4 ΤΣΙ 000007678 000007678 BK 23 1 |
| spellingShingle | Τσιβίδης Γιάννης Π. Operation and modeling of the MOS transistor VLSI, Electronics and Electronic Circuits Ημιαγωγοί μεταλλικού οξειδίου |
| title | Operation and modeling of the MOS transistor |
| title_auth | Operation and modeling of the MOS transistor |
| title_full | Operation and modeling of the MOS transistor Yannis P. Tsividis |
| title_fullStr | Operation and modeling of the MOS transistor Yannis P. Tsividis |
| title_full_unstemmed | Operation and modeling of the MOS transistor Yannis P. Tsividis |
| title_short | Operation and modeling of the MOS transistor |
| topic | Ημιαγωγοί μεταλλικού οξειδίου |
| topic_facet | Ημιαγωγοί μεταλλικού οξειδίου |