Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς: Μεσσαριτάκης, Χάρης, Καψάλης, Αλέξανδρος, Σίμος, Ηρακλής, Σίμος, Χρήστος, Krakowski, M., Krestinkov, Igor, Συβρίδης, Δημήτρης
Μορφή: Άρθρο
Γλώσσα:English
Έκδοση: 2013
Διαθέσιμο Online:http://cris.lib2.uniwa.gr/jspui/handle/123456789/448
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abstract In this Letter, a design for a tapered InAs/InGaAs quantum dot semiconductor optical amplifier is proposed and experimentally evaluated. The amplifier’s geometry was optimized in order to reduce gain saturation effects and improve gain efficiency and beam quality. The experimental measurements confirm that the proposed amplifier allows for an elevated optical gain in the saturation regime, whereas a five-fold increase in the coupling efficiency to a standard single mode optical fiber is observed, due to the improvement in the beam quality factor M2 of the emitted beam.
author Μεσσαριτάκης, Χάρης
Καψάλης, Αλέξανδρος
Σίμος, Ηρακλής
Σίμος, Χρήστος
Krakowski, M.
Krestinkov, Igor
Συβρίδης, Δημήτρης
author_facet Μεσσαριτάκης, Χάρης
Καψάλης, Αλέξανδρος
Σίμος, Ηρακλής
Σίμος, Χρήστος
Krakowski, M.
Krestinkov, Igor
Συβρίδης, Δημήτρης
author_sort Μεσσαριτάκης, Χάρης
collection Current Research Information System
format Άρθρο
id cris-123456789-448
institution University of West Attica Campus II
language English
publishDate 2013
record_format dspacecris
spelling cris-123456789-4482018-12-13T13:24:51Z Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality Μεσσαριτάκης, Χάρης Καψάλης, Αλέξανδρος Σίμος, Ηρακλής Σίμος, Χρήστος Krakowski, M. Krestinkov, Igor Συβρίδης, Δημήτρης In this Letter, a design for a tapered InAs/InGaAs quantum dot semiconductor optical amplifier is proposed and experimentally evaluated. The amplifier’s geometry was optimized in order to reduce gain saturation effects and improve gain efficiency and beam quality. The experimental measurements confirm that the proposed amplifier allows for an elevated optical gain in the saturation regime, whereas a five-fold increase in the coupling efficiency to a standard single mode optical fiber is observed, due to the improvement in the beam quality factor M2 of the emitted beam. 2013 Άρθρο http://cris.lib2.uniwa.gr/jspui/handle/123456789/448 0146-9592 en σελ. 2404-2406
spellingShingle Μεσσαριτάκης, Χάρης
Καψάλης, Αλέξανδρος
Σίμος, Ηρακλής
Σίμος, Χρήστος
Krakowski, M.
Krestinkov, Igor
Συβρίδης, Δημήτρης
Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality
title Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality
title_full Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality
title_fullStr Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality
title_full_unstemmed Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality
title_short Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality
title_sort tapered inas/ingaas quantum dot semiconductor optical amplifier design for enhanced gain and beam quality
url http://cris.lib2.uniwa.gr/jspui/handle/123456789/448