Effect of the number of quantum dot layers and dual state emission on the performance of InAs/InGaAs passively mode-locked lasers

Παρόμοια τεκμήρια

• Dual ground-state pulse generation from a passively mode-locked InAs/InGaAs quantum dot laser
  ανά: Μεσσαριτάκης, Χάρης, κ.ά.
  Έκδοση: (2011)
• External optical feedback-induced wavelength selection and Q-switching elimination in an InAs/InGaAs passively mode locked quantum dot laser
  ανά: Μεσσαριτάκης, Χάρης, κ.ά.
  Έκδοση: (2012)
• Pulse width narrowing due to dual ground state emission in quantum dot passively mode locked lasers
  ανά: Μεσσαριτάκης, Χάρης, κ.ά.
  Έκδοση: (2010)
• Effect of optical feedback to the ground and excited state emission of a passively mode locked quantum dot laser
  ανά: Μεσσαριτάκης, Χάρης, κ.ά.
  Έκδοση: (2010)
• Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality
  ανά: Μεσσαριτάκης, Χάρης, κ.ά.
  Έκδοση: (2013)