Potential of InGaAs/GaAs quantum dots for applications in vertical cavity semiconductor optical amplifiers
| Κύριοι συγγραφείς: | , , , , |
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| Μορφή: | Άρθρο |
| Γλώσσα: | English |
| Έκδοση: |
2008
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| Διαθέσιμο Online: | http://cris.lib2.uniwa.gr/jspui/handle/123456789/431 |
| _version_ | 1780538456148017152 |
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| abstract | The use of InGaAs/GaAs quantum dots (QDs) in vertical cavity semiconductor optical amplifiers (VCSOAs) is proposed and analyzed. The results underline the distinctive differences between practical designs for QD vertical cavity semiconductor lasers and QD-VCSOAs. By means of a QD rate-equation scheme that accounts for both homogeneous and inhomogeneous broadening and the VCSOA cavity characteristics, the effects of material properties are identified. The design routes outlined here ensure the suitability of QD-VCSOAs for high-speed applications (>100 Gb/s) that rely on the fast carrier dynamics. |
| author | Βασιλειάδης, Μ. Αλεξανδρόπουλος, Δημήτρης Adams, M. J. Σίμος, Ηρακλής Συβρίδης, Δημήτρης |
| author_facet | Βασιλειάδης, Μ. Αλεξανδρόπουλος, Δημήτρης Adams, M. J. Σίμος, Ηρακλής Συβρίδης, Δημήτρης |
| author_sort | Βασιλειάδης, Μ. |
| collection | Current Research Information System |
| format | Άρθρο |
| id | cris-123456789-431 |
| institution | University of West Attica Campus II |
| language | English |
| publishDate | 2008 |
| record_format | dspacecris |
| spelling | cris-123456789-4312018-12-13T13:24:48Z Potential of InGaAs/GaAs quantum dots for applications in vertical cavity semiconductor optical amplifiers Βασιλειάδης, Μ. Αλεξανδρόπουλος, Δημήτρης Adams, M. J. Σίμος, Ηρακλής Συβρίδης, Δημήτρης The use of InGaAs/GaAs quantum dots (QDs) in vertical cavity semiconductor optical amplifiers (VCSOAs) is proposed and analyzed. The results underline the distinctive differences between practical designs for QD vertical cavity semiconductor lasers and QD-VCSOAs. By means of a QD rate-equation scheme that accounts for both homogeneous and inhomogeneous broadening and the VCSOA cavity characteristics, the effects of material properties are identified. The design routes outlined here ensure the suitability of QD-VCSOAs for high-speed applications (>100 Gb/s) that rely on the fast carrier dynamics. 2008 Άρθρο http://cris.lib2.uniwa.gr/jspui/handle/123456789/431 1077-260X en σελ. 1180 - 1187 |
| spellingShingle | Βασιλειάδης, Μ. Αλεξανδρόπουλος, Δημήτρης Adams, M. J. Σίμος, Ηρακλής Συβρίδης, Δημήτρης Potential of InGaAs/GaAs quantum dots for applications in vertical cavity semiconductor optical amplifiers |
| title | Potential of InGaAs/GaAs quantum dots for applications in vertical cavity semiconductor optical amplifiers |
| title_full | Potential of InGaAs/GaAs quantum dots for applications in vertical cavity semiconductor optical amplifiers |
| title_fullStr | Potential of InGaAs/GaAs quantum dots for applications in vertical cavity semiconductor optical amplifiers |
| title_full_unstemmed | Potential of InGaAs/GaAs quantum dots for applications in vertical cavity semiconductor optical amplifiers |
| title_short | Potential of InGaAs/GaAs quantum dots for applications in vertical cavity semiconductor optical amplifiers |
| title_sort | potential of ingaas/gaas quantum dots for applications in vertical cavity semiconductor optical amplifiers |
| url | http://cris.lib2.uniwa.gr/jspui/handle/123456789/431 |